发明名称 DEVELOPMENT METHOD AND DEVELOPMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To see to it that every wafer is developed in an optimum time length. SOLUTION: In this wafer development method, a developer is supplied to the surface of a resist film formed on a wafer, and during the development of the resist film, the line width of a pattern on the resist film is measured. Line width measurement is repeatedly performed during the development process. Upon the detection of a predetermined line width in line width measurement, development is halted. In this way, the pattern of a desired line width is formed for each wafer, and each wafer is developed in an optimum time length. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191303(A) 申请公布日期 2005.07.14
申请号 JP20030431334 申请日期 2003.12.25
申请人 TOKYO ELECTRON LTD 发明人 TANAKA MICHIO;YAMASHITA TAKEHIDE
分类号 G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
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