| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid imaging device wherein the transferring faultiness of its transferring route is reduced. SOLUTION: The solid imaging device has a semiconductor substrate for defining a two-dimensional surface, many photoelectric conversion elements 12 disposed in a light receiving region of the semiconductor substrate over a plurality of rows and a plurality of columns, a plurality of vertical charge transferring channels arranged vertically among the columns of the respective photoelectric conversion elements, and multilayer transferring electrodes so formed above each vertical transferring channel as to extend them in the horizontal direction and for transferring signal charges read out by each vertical transferring channel. Hereupon, in the portion where lower- and upper-layer electrodes 16a, 16b of the multilayer transferring electrodes overlap with each other, at least one of the lower- and upper-layer electrodes 16a, 16b are laid out more widely than other portions. COPYRIGHT: (C)2005,JPO&NCIPI
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