| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device stable and high in performance and furnished with a highly dielectric insulating film. SOLUTION: The semiconductor device has a Ge semiconductor region and an insulating film region which directly contacts with the Ge semiconductor region and contains a metal, germanium, and oxygen. The Ge semiconductor region is a Ge substrate (11), and the insulating film region is a gate insulating film (12). COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2005191293(A) |
申请公布日期 |
2005.07.14 |
| 申请号 |
JP20030431028 |
申请日期 |
2003.12.25 |
| 申请人 |
TOSHIBA CORP |
发明人 |
KAMATA YOSHIKI;NISHIYAMA AKIRA;INO TSUNEHIRO;KAMIMUTA YUICHI;KOIKE MASAHIRO |
| 分类号 |
H01L21/20;H01L21/28;H01L21/283;H01L21/31;H01L21/316;H01L21/3205;H01L21/336;H01L21/469;H01L21/8247;H01L27/115;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/78;H01L21/824 |
主分类号 |
H01L21/20 |
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