| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which data direction of a cell, that is connected to a word line where redundancy replacement has been performed, is guaranteed by an external control without depending on the address of the word line where redundancy replacement is to be conducted and the cell where redundancy replacement has been conducted is rightly evaluated. SOLUTION: When a Row address, a redundancy address and a redundancy hit signal are inputted to a data scramble circuit 51 and a data inversion control signal Dinv ("H") is outputted from the circuit 51 for example, DQ buffers 25a and 25b which received the data inversion control signal Dinv ("H") invert the data read from a cell (RMC) where redundancy replacement has been conducted during reading operations, for example. Then, the inverted data are outputted to the external from a DQ pad 11. In a bit line twist system semiconductor memory device, it is most important to guarantee the data direction of the cell, that is connected to the word line for which redundancy replacement is conducted, by the external control without depending on the word line for which redundancy replacement is to be conducted. COPYRIGHT: (C)2005,JPO&NCIPI
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