发明名称 HARD THICK FILM, AND METHOD FOR FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To solve problems that the internal stress is high in a thick film of≥10μm in thickness, a hard film is easily peeled from a substrate, and cathodes for both a single metal and a multicomponent metal are required and productivity is decreased if using a stress-relieving layer of single metal in a case of a multi-metal nitride by the ion-plating. SOLUTION: The internal stress is reduced to suppress peeling by depositing a hard thick film coating having a structure that a stress-relieving layer based on a non-columnar crystalline compound metal nitride layer deposited at the low bias voltage is inserted by a predetermined thickness at a predetermined interval in a columnar crystalline multi-metal nitride coating deposited at the high bias voltage. The hard film coating is deposited by repeating a step A of depositing a columnar crystalline multi-metal nitride layer for a predetermined time and a step B of depositing a non-columnar crystalline multi-metal nitride layer for a predetermined time. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005187859(A) 申请公布日期 2005.07.14
申请号 JP20030428712 申请日期 2003.12.25
申请人 ION ENGINEERING RESEARCH INSTITUTE CORP 发明人 ANDO AKIRO;NIE TOMOTSUGU;WATANABE HISASHI;OTANI SABURO
分类号 F01L1/04;C23C14/06;C23C14/32;F01L1/14;F02F5/00;(IPC1-7):C23C14/06 主分类号 F01L1/04
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