发明名称 |
HARD THICK FILM, AND METHOD FOR FORMING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To solve problems that the internal stress is high in a thick film of≥10μm in thickness, a hard film is easily peeled from a substrate, and cathodes for both a single metal and a multicomponent metal are required and productivity is decreased if using a stress-relieving layer of single metal in a case of a multi-metal nitride by the ion-plating. SOLUTION: The internal stress is reduced to suppress peeling by depositing a hard thick film coating having a structure that a stress-relieving layer based on a non-columnar crystalline compound metal nitride layer deposited at the low bias voltage is inserted by a predetermined thickness at a predetermined interval in a columnar crystalline multi-metal nitride coating deposited at the high bias voltage. The hard film coating is deposited by repeating a step A of depositing a columnar crystalline multi-metal nitride layer for a predetermined time and a step B of depositing a non-columnar crystalline multi-metal nitride layer for a predetermined time. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005187859(A) |
申请公布日期 |
2005.07.14 |
申请号 |
JP20030428712 |
申请日期 |
2003.12.25 |
申请人 |
ION ENGINEERING RESEARCH INSTITUTE CORP |
发明人 |
ANDO AKIRO;NIE TOMOTSUGU;WATANABE HISASHI;OTANI SABURO |
分类号 |
F01L1/04;C23C14/06;C23C14/32;F01L1/14;F02F5/00;(IPC1-7):C23C14/06 |
主分类号 |
F01L1/04 |
代理机构 |
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主权项 |
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地址 |
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