Deposition chamber and method for depositing low dielectric constant films

摘要

An improved deposition chamber ( 2 ) includes a housing ( 4 ) defining a chamber ( 18 ) which houses a substrate support ( 14 ). A mixture of oxygen and SiF₄ is delivered through a set of first nozzles ( 34 ) and silane is delivered through a set of second nozzles ( 34 a) into the chamber around the periphery ( 40 ) of the substrate support. Silane (or a mixture of silane and SiF₄) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices ( 64, 76 ). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.