发明名称 |
METHOD FOR CLEANING FILM DEPOSITION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of efficiently cleaning a film deposition system for removing ruthenium based depositions deposited on the components of a film deposition system after being used for the formation of a film composed of ruthenium or solid ruthenium oxide, and in which at least the surface layer region is composed of solid ruthenium oxide. SOLUTION: Ruthenium based depositions in which at least the surface layer region is composed of solid ruthenium oxide are brought into contact with a reducing gas comprising reducing seed consisting of hydrogen or hydrogen radicals to convert the solid ruthenium oxide into metal ruthenium. Thereafter, the metal ruthenium is brought into contact with oxidative gas containing an oxidizing seed consisting of an oxygen-containing compound and is converted into volatile ruthenium oxide. The volatile ruthenium oxide is removed from the film deposition system. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005187880(A) |
申请公布日期 |
2005.07.14 |
申请号 |
JP20030430763 |
申请日期 |
2003.12.25 |
申请人 |
L'AIR LIQUIDE SA POUR L'ETUDE & L'EXPLOITATION DES PROCEDE S GEORGES CLAUDE |
发明人 |
GATINEAU JULIEN;DUSSARAT CHRISTIAN;YANAGIDA KAZUTAKA;FUJITA TOMOKI;JEAN-MARC GILLARD |
分类号 |
C23C14/00;B08B7/00;C23C14/56;C23C16/44;(IPC1-7):C23C14/00 |
主分类号 |
C23C14/00 |
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