| 摘要 |
A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH<SUB>3 </SUB>gas, an NH<SUB>3 </SUB>gas purge step of purging NH<SUB>3 </SUB>gas, and a step of further repeating the deposition step, the anneal step, and the NH<SUB>3 </SUB>gas purge step for at least one time. The deposition step is performed using titanium halide gas and NH<SUB>3 </SUB>gas as material gases and with a deposition temperature of 300° C.-450° C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.
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