Solid-state high power device and method

摘要

A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers in a uniform or non-uniform manner to provide improved high power performance is disclosed. Preferably, each of the fingers is associated with a corresponding one of a plurality of sub-cells, the sub-cells being arranged in at least one row. The advantage of the invention is that the structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects resulting from random variation in the manufacturing and design process.