发明名称 Freestanding multilayer IC wiring structure
摘要 A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps. The MEMS structure of this embodiment includes freestanding electrodes which are not fixed to the substrate.
申请公布号 US2005151256(A1) 申请公布日期 2005.07.14
申请号 US20050060802 申请日期 2005.02.18
申请人 NATZLE WESLEY C. 发明人 NATZLE WESLEY C.
分类号 H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L23/522
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