发明名称 SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser element and its manufacturing method capable of improving the tight adhesion of a plating electrode. SOLUTION: A ridge 11 is formed on an etching stop layer 5. The side face of the ridge 11 is covered with a dielectric film 21, and the upper surface of the ridge 11 is covered with a p side electrode 31. On the dielectric film 21 and the p side electrode 31, a base electrode 32 for plating composed of Mo and Au is formed. The Mo and Au are stuck onto the dielectric film 21 and the p side electrode 31 from an oblique direction to the main surface of a substrate 1. On the base electrode 32 for plating, the plating electrode 33 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191380(A) 申请公布日期 2005.07.14
申请号 JP20030432732 申请日期 2003.12.26
申请人 SHARP CORP 发明人 KONDO MASAKI
分类号 H01S5/042;H01S5/22;(IPC1-7):H01S5/042 主分类号 H01S5/042
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