| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can obtain a desired voltage value. SOLUTION: The semiconductor device 10 has an anode impurity region 13 and a cathode impurity region 14 in a semiconductor substrate having an SOI (Silicon On Insulator) structure and comprises a voltage controlling impurity region 15, between the anode and cathode impurity regions. COPYRIGHT: (C)2005,JPO&NCIPI
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