MULTI-BEAM TYPE SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a multi-beam type semiconductor laser having such a configuration that can change a pitch between laser beams and has no probabilities of crosstalk and power down. SOLUTION: End face reflection mirrors 21A and 21B are formed on both ends of a lasing region 10 inside an active layer 3 along a current path 9 of stripe geometry. The reflection factor of the end face reflection mirrors is set to such one that no laser light may not be emitted from the end face of the front end face reflection mirror 21A. A wavelength divider 8 which changes an optical path of the only light having a laser oscillation wavelength out of the lasing region is formed at any position in the lasing region 10 inside the active layer 3. COPYRIGHT: (C)2005,JPO&NCIPI