METHOD OF MANUFACTURING A TRENCH-GATE SEMICONDUCTOR DEVICE
摘要
A method of making a trench MOSFET includes forming a nitride liner 50 on the sidewalls 28 of a trench and a plug of doped polysilicon 26 at the bottom of a trench. The plug of polysilicon 26 may then be oxidised to form a thick oxide plug 30 at the bottom of the trench whilst the nitride liner 50 protects the sidewalls 28 from oxidation. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.
申请公布号
WO2004055882(A8)
申请公布日期
2005.07.14
申请号
WO2003IB06014
申请日期
2003.12.08
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;HIJZEN, ERWIN, A.;HUETING, RAYMOND, J., E.;IN 'T ZANDT, MICHAEL, A., A.
发明人
HIJZEN, ERWIN, A.;HUETING, RAYMOND, J., E.;IN 'T ZANDT, MICHAEL, A., A.