| 发明名称 |
GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A Group III nitride semiconductor light-emitting element includes a crack-preventing layer 15 of n-type GaN provided between a n-type contact layer 4A/<.> and a n-type clad layer 5A, wherein the crack-preventing layer 15 has a dopant concentration lower than that of the n-type contact layer 4A. <IMAGE>
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| 申请公布号 |
EP1553669(A1) |
申请公布日期 |
2005.07.13 |
| 申请号 |
EP20030808894 |
申请日期 |
2003.09.29 |
| 申请人 |
PIONEER CORPORATION |
发明人 |
WATANABE, ATSUSHI;TAKAHASHI, HIROKAZU;KIMURA, YOSHINORI;MIYACHI, MAMORU |
| 分类号 |
H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343;(IPC1-7):H01S5/323 |
主分类号 |
H01L33/06 |
| 代理机构 |
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代理人 |
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