发明名称 |
PRODUCTION METHOD FOR THIN-FILM CRYSTAL WAFER, SEMICONDUCTOR DEVICE USING IT AND PRODUCTION METHOD THEREFOR |
摘要 |
The n<+>-GaAs layer 8 of the GaAs single crystal 10 is formed by epitaxial growth, followed by epitaxially growing the Si-layer 11 in the same epitaxial growth furnace, and then the aluminum electrode 12 is formed on the Si-layer 11 as an ohmic electrode. The Si-layer 11 can suppress the formation of a surface defect level on the surface of the n<+>-GaAs layer 8 and can effectively prevent the formation of an unnecessary potential barrier. Since the Si-layer 11 has a smooth surface and is excellent in chemical stability, a good ohmic electrode can be obtained by forming the electrode 12 using aluminum or the like that has a suitable work function to the Si-layer 11. <IMAGE>
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申请公布号 |
EP1553618(A1) |
申请公布日期 |
2005.07.13 |
申请号 |
EP20030751458 |
申请日期 |
2003.10.10 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
HATA, MASAHIKO |
分类号 |
H01L21/28;H01L21/203;H01L21/205;H01L21/285;H01L21/331;H01L29/267;H01L29/417;H01L29/45;H01L29/737;H01L33/30;H01L33/36;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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