Method for fabrication of a contact structure

摘要

A method for producing a contact structure (116) on a structured surface (100a) comprises producing a first conductive layer (112) on the structured surface (100a), the first conductive layer (112) comprising tungsten. A conductive seed layer (114) is produced on the first conductive layer (112), the contact structure (116) being produced by electroplating on the seed layer (114). The first conductive layer (112) serves as an etch stop for selectively removing substrate material from the backside.