发明名称 Two dimensional magnetron scanning for planar sputtering
摘要 <p>A generally rectangular magnetron (40; 50; 60, 80; 90; 100; 112) placed at the back of a rectangular target (16) to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel (14). The magnetron (40; 50; 60, 80; 90; 100; 112) has a size only somewhat less than that of the target (14) and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100mm for a 2m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron (40; 50; 60, 80; 90; 100; 112) includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole (64;92) of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole (66;96) having the opposed polarity. &lt;IMAGE&gt;</p>
申请公布号 EP1553207(A2) 申请公布日期 2005.07.13
申请号 EP20050000140 申请日期 2005.01.05
申请人 APPLIED MATERIALS, INC. 发明人 TEPMAN, AVI
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
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