发明名称 |
High-density NVRAM |
摘要 |
High density NVRAM. An array of memory cells capable of storing at least a megabit of information, each memory cell including a memory plug that includes a memory element that switches from a first resistance state to a second resistance state upon application of a first write voltage of a first polarity and reversibly switches from the second resistance state to the first resistance state upon application of a second write voltage of polarity opposite to the first polarity.
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申请公布号 |
US6917539(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20030360005 |
申请日期 |
2003.02.07 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;LONGCOR STEVEN W.;WARD EDMOND R.;HSIA STEVE KUO-REN;KINNEY WAYNE |
分类号 |
G11C11/56;G11C13/00;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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