发明名称 High-density NVRAM
摘要 High density NVRAM. An array of memory cells capable of storing at least a megabit of information, each memory cell including a memory plug that includes a memory element that switches from a first resistance state to a second resistance state upon application of a first write voltage of a first polarity and reversibly switches from the second resistance state to the first resistance state upon application of a second write voltage of polarity opposite to the first polarity.
申请公布号 US6917539(B2) 申请公布日期 2005.07.12
申请号 US20030360005 申请日期 2003.02.07
申请人 UNITY SEMICONDUCTOR CORPORATION 发明人 RINERSON DARRELL;LONGCOR STEVEN W.;WARD EDMOND R.;HSIA STEVE KUO-REN;KINNEY WAYNE
分类号 G11C11/56;G11C13/00;(IPC1-7):G11C11/14 主分类号 G11C11/56
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