发明名称 High-frequency module substrate device
摘要 A high frequency module substrate device used in a high frequency module apparatus, which is adapted for switching pass-frequency characteristic of band-pass filter by switching and is adapted so that optimum band-pass filter characteristic is obtained in all pass-frequency bands, wherein a thin film capacitor element ( 18 ) is constituted between a base substrate ( 2 ) in which the uppermost layer is flattened with organic substrate being as core substrates ( 5 ), ( 6 ) to constitute a buildup formation surface ( 16 ) and a high frequency circuit unit ( 3 ) of lumped parameter design formed on the buildup formation surface in a laminated manner to carry out switching of load of parallel capacity with respect to a coupler ( 11 ) having frequency characteristic of lambda/4 which has been caused to undergo distributed parameter design at the base substrate portion side of the thin film capacitor through switch means ( 4 ).
申请公布号 US6917259(B2) 申请公布日期 2005.07.12
申请号 US20030416409 申请日期 2003.05.12
申请人 SONY CORPORATION 发明人 HIRABAYASHI TAKAYUKI
分类号 H01G4/33;H01P1/203;H01P1/205;H01P1/213;H03H7/01;H04B1/40;H05K1/16;H05K3/46;(IPC1-7):H01P1/10;H01P5/12;B81B7/00 主分类号 H01G4/33
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