发明名称 Content addressable memory with redundant repair function
摘要 A shift information latch circuit includes a plurality of latch portions provided corresponding to memory cell rows, respectively, and a fuse circuit transmitting fuse data produced corresponding to an address of a faulty memory cell row. The plurality of latch portion successively receive fuse data, and each transmit a shift control signal instructing a shift operation. In response to this shift control signal, a row decoder and a match line amplifier execute a shift operation for repairing the faulty memory cell row. In this structure, a decoder circuit decoding the address of the faulty memory cell row is not arranged so that a whole area of the circuits executing the shift operation is reduced, and the shift operation can be easily executed.
申请公布号 US6917558(B2) 申请公布日期 2005.07.12
申请号 US20040768036 申请日期 2004.02.02
申请人 RENESAS TECHNOLOGY CORP. 发明人 MATSUOKA HIDETO;NODA HIDEYUKI
分类号 G11C15/00;G11C15/04;G11C29/00;G11C29/04;(IPC1-7):G11C8/00;G11C7/00 主分类号 G11C15/00
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