发明名称 |
Semiconductor device |
摘要 |
A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.
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申请公布号 |
US6917075(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20040752409 |
申请日期 |
2004.01.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
INOUE AKIRA;ASAI AKIRA;OHNISHI TERUHITO;SORADA HARUYUKI;HARA YOSHIHIRO;TAKAGI TAKESHI |
分类号 |
H01L21/336;H01L21/768;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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