发明名称 |
Method to fabricate high reliable metal capacitor within copper back-end process |
摘要 |
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
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申请公布号 |
US6916722(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20020307617 |
申请日期 |
2002.12.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG CHI-FENG;CHEN CHUN-HON;WONG SHY-CHY;LIN CHIH HSIEN |
分类号 |
H01L21/02;H01L21/285;H01L21/314;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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