发明名称 Method for forming aerial metallic wiring on semiconductor substrate
摘要 A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.
申请公布号 US6916735(B2) 申请公布日期 2005.07.12
申请号 US20020259501 申请日期 2002.09.30
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO 发明人 FUJIKAWA TAKAO;YOSHIKAWA TETSUYA
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/476;H01L21/76 主分类号 H01L23/522
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