发明名称 |
Method for forming aerial metallic wiring on semiconductor substrate |
摘要 |
A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.
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申请公布号 |
US6916735(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20020259501 |
申请日期 |
2002.09.30 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
FUJIKAWA TAKAO;YOSHIKAWA TETSUYA |
分类号 |
H01L23/522;H01L21/768;(IPC1-7):H01L21/476;H01L21/76 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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