发明名称 |
EEPROM memory cell and method of forming the same |
摘要 |
An EEPROM memory cell and a method of forming the same are provided. A portion of a floating gate is formed on walls of a trench formed on the substrate. An inside of the trench is filled with a gate electrode layer constituting a sensing line. This leads to increases in opposite areas of a floating gate and a control gate of a sensing transistor, and a decrease in an area of the floating gate in the substrate. The method of forming an EEPROM memory cell comprises forming a trench in an active area in which a sensing transistor of the substrate will be formed; forming a gate insulation layer including a tunneling insulation layer on an entire surface of the substrate including an inside of the trench; conformally forming a first conductive layer covering the inside of the trench after forming the gate insulation layer; conformally forming a dielectric layer on the first conductive layer; forming a floating gate by patterning the first conductive layer; and stacking and patterning a second conductive layer on the dielectric layer to form a word line and a sensing line.
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申请公布号 |
US6916711(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20040819515 |
申请日期 |
2004.04.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO HYUN-KHE |
分类号 |
H01L27/115;H01L21/28;H01L21/8247;H01L29/423;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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