METHOD OF FORMING GATE PATTERN IN SEMICONDUCTOR DEVICE,申请号KR20040000707-传众专利搜索

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发明名称	METHOD OF FORMING GATE PATTERN IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20050072316(A)	申请公布日期	2005.07.11
申请号	KR20040000707	申请日期	2004.01.06
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, NAM JOONG;KIM, MOO HYUN
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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