发明名称 |
SEMICONDUCTOR DEVICE CHANNEL TERMINATION |
摘要 |
A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).
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申请公布号 |
KR20050072483(A) |
申请公布日期 |
2005.07.11 |
申请号 |
KR20057008351 |
申请日期 |
2005.05.11 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LOWIS ROYCE |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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