NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH SCALABLE TWO TRANSISTOR MEMORY CELLS,申请号KR20040000603-传众专利搜索

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发明名称	NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH SCALABLE TWO TRANSISTOR MEMORY CELLS
摘要
申请公布号	KR20050072229(A)	申请公布日期	2005.07.11
申请号	KR20040000603	申请日期	2004.01.06
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHO, WOO YEONG;CHOI, BYUNG GIL
分类号	G11C16/04;G11C11/34;G11C16/02;H01L27/115;(IPC1-7):G11C16/02	主分类号	G11C16/04
代理机构		代理人
主权项
地址

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