| 摘要 |
<p>In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20') for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm -2 and can provide a silicon-insulating film interface exhibiting a low interface state density.</p> |
