BACKSIDE-ILLUMINATED PHOTODIODE ARRAY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

摘要

A backside-illuminated photodiode array (1) comprises a semiconductor substrate (3) composed of a semiconductor of a first conductivity type, wherein a light to be sensed (L) is incident on one side of the semiconductor substrate (3) and a plurality of photodiodes are formed on the other side of the substrate (3). On this other side of the semiconductor substrate (3), an array of a plurality of recess portions (4) is formed, and a semiconductor region (5) of a second conductivity type which is composed of a semiconductor of the second conductivity type is formed in the bottom portion (4a) of each recess portion (4), thereby forming an array of photodiodes.