发明名称 ELECTRON BEAM EXPOSURE METHOD AND ELECTRON BEAM EXPOSURE SYSTEM
摘要 An electron beam exposure method wherein an object to be exposed and an electron beam irradiation spot are moved relative to each other at a continuous rate is characterized in that the object is exposed at a plurality of electron beam irradiation intensities by changing the transmittance of an electron optical system which forms the electron beam irradiation spot on the object.
申请公布号 KR20050072101(A) 申请公布日期 2005.07.08
申请号 KR20057005957 申请日期 2005.04.07
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ITO EIICHI;TSUKUDA MASAHIKO
分类号 G03F7/20;G11B7/26;G21K5/04;G21K5/10;H01J37/317 主分类号 G03F7/20
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