发明名称 |
ELECTRON BEAM EXPOSURE METHOD AND ELECTRON BEAM EXPOSURE SYSTEM |
摘要 |
An electron beam exposure method wherein an object to be exposed and an electron beam irradiation spot are moved relative to each other at a continuous rate is characterized in that the object is exposed at a plurality of electron beam irradiation intensities by changing the transmittance of an electron optical system which forms the electron beam irradiation spot on the object. |
申请公布号 |
KR20050072101(A) |
申请公布日期 |
2005.07.08 |
申请号 |
KR20057005957 |
申请日期 |
2005.04.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITO EIICHI;TSUKUDA MASAHIKO |
分类号 |
G03F7/20;G11B7/26;G21K5/04;G21K5/10;H01J37/317 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|