| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein oxidation erosion can be suppressed without a large change of electrode boundary structure and which is superior in reliability and is compact in size and small in thickness. SOLUTION: Two layers of input/output pads 2 and 3 are formed on the surface of a substrate 1, a surface protection film 7 is formed to cover from the periphery of the input/output pads 2 and 3 to the surface of the substrate, and a metal projection electrode 6 is formed on the input/output pads 2 and 3 including the inner circumference of the surface protection film 7 with a barrier metal 4 (4a and 4b) in between. In the semiconductor device having such a structure, a recessed part such as slits 9 and 10 or the like is formed on the inner circumference of the surface protection film 7 to cover the periphery of the input/output pads 2 and 3. Thus, a step is produced by the slits 9 and 10, and the surface of the barrier metal 4 formed along the step is made irregular in shape, and a path for the entry of a water content to a boundary with the barrier metal 4 becomes long. As a result, the oxidation erosion of the barrier metal 4 can be suppressed, and at the same time, an contact area between the barrier metal 4 and the metal projection electrode 6 is made large, thereby preventing the peeling of the metal projection electrode 6 so as to make connection quality stable. COPYRIGHT: (C)2005,JPO&NCIPI
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