| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a low resistance and ultra-thin ITO film which is 10-60 nm in thickness, and heat-resistant. SOLUTION: An ultrathin ITO film of 10-60 nm thickness is formed with a substrate temperature of a room temperature to 100°C by a sputtering apparatus. It is annealed in a vacuum of 0.01 Pa at 150-250°C for 10 minutes. When the film was annealed, after having been formed, in the vacuum of 0.01 Pa, the resistivity was almost constant at 240μΩcm with a film thickness of 10-60 nm, yielding a low-resistant ultra-thin ITO film. A heat treatment in a panel making process did not change its resistivity, showing satisfactory stability of the film. When a film has been annealed in the atmosphere after having been formed, the resistivity has been 260μΩcm, with a film thickness of 60 nm, and the resistivity has been 800μΩcm, with a film thickness of 10 nm. COPYRIGHT: (C)2005,JPO&NCIPI
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