GUNN DIODE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a Gunn diode the thermal conductivity characteristic, the electric conductivity characteristic, and the mechanical characteristic of a substrate of which are optimized by enhancing a degree of selection freedom of the type of materials of the substrate configuring the Gunn diode. SOLUTION: The Gunn diode is configured such that first n+-type layers 2a of a plurality of Gunn diode elements 4 are joined with the surface of the conductive substrate 1, the Gunn diode elements 4 being formed by sequentially laminating first n+-type layers 2a, n--type layers 2b and second n+-type layers 2c of a thin film semiconductors 2, and electrode layers 3 on the surface of the substrate 1. Thus, a degree of selection freedom of the types of materials of the conductive substrate 1 is enhanced, and for example, when a material of a type with a high thermal conductivity is selected for the conductive substrate 1, the temperature rise in Gunn diode active layers (n-type layers 2b) is suppressed so that the strength of a millimeter wave output can be stabilized. COPYRIGHT: (C)2005,JPO&NCIPI