COMPOSITION FOR SILICA BASED FILM FORMATION, SILICA BASED FILM, AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silica based film which has low relative permittivity and is excellent in tolerance over chemical used in a semiconductor manufacturing process, and to provide its manufacturing method. SOLUTION: The silica based film consists of texture expressed with a general formula: SiOxCyHz. In the silica based film, relative permittivity is at most 2.6, and median of hole diameter measured with an Ar/DFT method (Ar at 87 K on zeolites and silica (NLDFT equibrium model)) is at most 3 nm. In the formula, x, y and z are 1.0