| 摘要 |
PROBLEM TO BE SOLVED: To provide a component batch exposure type electron beam exposure method which can prevent the influence of a proximity effect between patterns and can improve drawing throughput. SOLUTION: Low-energy electron beams of acceleration voltages of 10 kV or lower are generated by an electron gun 11. The electron beams EB emitted from the electron gun 11 are selectively irradiated on some of a plurality of openings 22<SB>1</SB>-22<SB>n</SB>for partial batch exposure which are formed on a second aperture 20 and have a shape of a drawing profile. When transferring the drawing profile shapes of some of the openings 22<SB>1</SB>-22<SB>n</SB>for partial batch exposure formed on the second aperture 20 to a wafer 30 by irradiating the electron beams EB which have passed through the openings 22<SB>1</SB>-22<SB>n</SB>for partial batch exposure on the wafer 30, the transferred drawing profile shapes of the adjacent openings for partial batch exposure are separated by a backscattering distance or longer. COPYRIGHT: (C)2005,JPO&NCIPI
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