发明名称 SOLID-STATE IMAGIND DEVICE
摘要 PROBLEM TO BE SOLVED: To make a potential gradient to the residual electric charge emission path appropriate, and thereby to ensure that residual electric charge in a well for modulation is discharged. SOLUTION: The solid-state imaging device is characterized in that it comprises: a modulation transistor transistor TM, of which threshold voltage in a channel is controlled by a light-generating electric charge held in a well 5 for modulation to output pixel signals depending on the light-generating electric charge; and a discharge path RC for the light-generating electric charge formed nearby the substrate surface adjacent to the modulation transistor TM, wherein a lower limit D between a source region 7 and a diffusion region 21 is set so as not to bring a parasitic bipolar transistor, which is formed by a diffusion layer 21, the well 5 for modulation, and the source region 7, into conduction, and an upper limit D between the source region 7 and the diffusion region 21 is set so as to enable the light-generating electric charge accumulated in the well 5 for modulation to be discharged to the discharge path RC. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005183921(A) 申请公布日期 2005.07.07
申请号 JP20040195537 申请日期 2004.07.01
申请人 SEIKO EPSON CORP 发明人 NARITA YOSHITAKA;MARUO YUTAKA
分类号 H01L27/146;H01L31/10;H04N5/335;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 主分类号 H01L27/146
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