| 发明名称 |
CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT |
| 摘要 |
A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
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| 申请公布号 |
US2005148136(A1) |
申请公布日期 |
2005.07.07 |
| 申请号 |
US20030748559 |
申请日期 |
2003.12.29 |
| 申请人 |
BRASK JUSTIN K.;DOCZY MARK L.;KAVALIEROS JACK;METZ MATTHEW V.;BARNS CHRIS E.;SHAH UDAY;DATTA SUMAN;THOMAS CHRISTOPHER D.;CHAU ROBERT S. |
发明人 |
BRASK JUSTIN K.;DOCZY MARK L.;KAVALIEROS JACK;METZ MATTHEW V.;BARNS CHRIS E.;SHAH UDAY;DATTA SUMAN;THOMAS CHRISTOPHER D.;CHAU ROBERT S. |
| 分类号 |
H01L21/8238;(IPC1-7):H01L21/823;H01L23/48 |
主分类号 |
H01L21/8238 |
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