Manufacturing method of solid-state image pickup device, and solid-state image pickup device

摘要

A p-type region of a light receiving section is formed by implanting boron ions from the direction normal to a semiconductor substrate. The ion implantation conditions of boron are a few hundred to 4 MeV for the ion implantation energy, 1x10¹⁰ to 1x10¹² ions/cm² for the implanted dose, and 0 degree±0.2 degrees for an ion implantation angle (theta) with respect to the direction normal to the surface of the semiconductor substrate.