High voltage drain-extended transistor

摘要

The present invention provides, in one embodiment, a transistor ( 100 ). The transistor ( 100 ) comprises a doped semiconductor substrate ( 105 ) and a drain-extended well ( 115 ) having a curved region ( 125 ) and a straight region ( 130 ) surrounded by the doped semiconductor substrate ( 105 ). The drain-extended well ( 115 ) has an opposite dopant type as the doped semiconductor substrate ( 105 ). The transistor ( 100 ) further includes a centered source/drain ( 120 ) surrounded by the drain-extended well ( 115 ) and separated from an outer perimeter ( 135 ) of the drain-extended well ( 115 ). A separation in the curved region ( 145 ) is greater than a separation in the straight region ( 150 ). Other embodiments of the present invention include an integrated circuit ( 300 ) and a method of manufacturing a transistor ( 200 ).