Infra red sensor, for a thermopile or bolometer, has a thin membrane supported on a substrate with an insulating film to carry an infra red absorption film as a detector

摘要

The infra red sensor (100) has a silicon semiconductor substrate (10), to support a membrane (13) as a thin section, together with an insulating film (12) of silicon oxide or silicon nitride on it. A detector (20), formed at least partially on the membrane, registers an electrical signal through the temperature change on receiving an infra red beam. An infra red absorption film (30), with a surface roughness of >=2 mu m, covers at least a part of the detector.