发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ION IMPLANTATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To form an LDD layer or halo layer precisely even if there is a variation in finish sizes of a gate electrode. SOLUTION: When the actual measured value of the gate length L of the gate electrode 13 is shorter than designed one, injection energy is increased at the time of forming the halo layers 15a and 15b and the inclination of an injection angleθis made large. When the actual measured value of the gate length L of the gate electrode 13 is longer than the designed one, injection energy is reduced at the time of forming the halo layers 15a and 15b, and the inclination of the injection angleθis made small. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005183521(A) 申请公布日期 2005.07.07
申请号 JP20030419437 申请日期 2003.12.17
申请人 SEIKO EPSON CORP 发明人 YOSHIKAWA KENJI
分类号 H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/265
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