发明名称 |
PLASMA PROCESSING EQUIPMENT AND PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide the plasma processing equipment and processing method that reduces impurities via reactor vessels, maintaining plasma stability. SOLUTION: In the plasma processing equipment, 90% of the side wall of the inner wall 101 in the reaction chamber 1 is covered with a dielectric substance 102, and a grounded conductive material 21a with an area size smaller than or equal to 10% of the side wall of the inner wall 101 is provided in a way that direct current flows via the plasma. A DC earth made up of a conductive material 21 is grounded at a location where the floating potential of plasma (or plasma density) is higher than that (or plasma density) of plasma 9 near a wafer holding electrode 14 with a relatively large degree of wall reduction. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005183833(A) |
申请公布日期 |
2005.07.07 |
申请号 |
JP20030425594 |
申请日期 |
2003.12.22 |
申请人 |
HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
TETSUKA TSUTOMU;IKENAGA KAZUYUKI;ONO TETSUO;KIKKAI MOTOHIKO;ITABASHI NAOSHI |
分类号 |
H01L21/3065;C23F4/00;H01J37/32;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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