发明名称 Method and system for patterning material in a thin film device
摘要 An aspect of the present invention is a method of patterning material in a thin-film device. The method includes forming a liftoff stencil, depositing a first layer of material through the liftoff stencil, depositing a second layer of material through the liftoff stencil, removing at least a portion of the liftoff stencil and performing a directional etch on the first and second layer of material.
申请公布号 US2005148196(A1) 申请公布日期 2005.07.07
申请号 US20030746170 申请日期 2003.12.26
申请人 SHARMA MANISH;ANTHONY THOMAS C.;LEE HOON 发明人 SHARMA MANISH;ANTHONY THOMAS C.;LEE HOON
分类号 H01L21/302;H01L21/461;H01L43/12;(IPC1-7):H01L21/302 主分类号 H01L21/302
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