发明名称 Semiconductor device having semiconductor memory with sense amplifier
摘要 A semiconductor device comprises a memory cell array, bit line, /bit line complementary to the bit line, reference voltage generating circuit and sense amplifier. The bit line is connected to the memory cells and applied with a voltage read from each memory cell of the memory cell array. The /bit line is supplied with a reference voltage. The reference voltage generating circuit generates the reference voltage that has temperature dependence for compensating a change in the voltage, read to the bit line, due to temperature. The reference voltage generating circuit controls the reference voltage such that the reference voltage assumes a midpoint of trails of a signal value distribution indicative of "0" data and a signal value distribution indicative of "1" data. The sense amplifier compares the voltage, read to the bit line, with the reference voltage supplied to the /bit line, and amplifies the difference therebetween.
申请公布号 US2005146918(A1) 申请公布日期 2005.07.07
申请号 US20050059569 申请日期 2005.02.17
申请人 OGIWARA RYU;TAKASHIMA DAISABURO;JACOB MICHAEL 发明人 OGIWARA RYU;TAKASHIMA DAISABURO;JACOB MICHAEL
分类号 G11C7/06;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C7/06
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