| 摘要 |
A resist composition, characterized in that it comprises (A) a fluorine-containing polymer having an acidic group being blocked with a blocking group having a cycloalkyl group, an organic group having one or more of cycloalkyl groups, a bicycloalkyl group or the like, (B) an acid generating compound capable of generating an acid by the irradiation with a light, and (C) an organic solvent. The resist composition is excellent in the transparency for a vacuum ultraviolet ray such as an F2excimer laser and in dry etching characteristics and further can be used for forming with ease a resist pattern excellent in sensitivity, resolution, flatness, thermal resistance and the like.
|
