发明名称 |
STI liner for SOI structure |
摘要 |
In a method of manufacturing a semiconductor device, an initial structure is provided. The initial structure includes a substrate, a patterned silicon layer, and a covering layer. The substrate has a buried insulator layer formed thereon. The patterned silicon layer is formed on the buried insulator layer. The covering layer is formed on the patterned silicon layer. A first layer is formed on the initial structure. Part of the first layer is removed with an etching process, such that a sidewall portion of the patterned silicon layer is exposed and such that a remaining portion of the first layer remains at a corner where the patterned silicon layer interfaces with the buried insulator layer. An oxide liner is formed on the exposed sidewall portion. A recess may be formed in the buried insulator layer (prior to forming the first layer) and may extend partially beneath the patterned silicon layer.
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申请公布号 |
US2005145937(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20030747494 |
申请日期 |
2003.12.29 |
申请人 |
CHEN KUANG-HSIN;TSAO HSUN-CHIH;CHEN HUNG-WEI;LEE DI-HONG;HOU CHUAN-PING;LU JHI-CHERNG |
发明人 |
CHEN KUANG-HSIN;TSAO HSUN-CHIH;CHEN HUNG-WEI;LEE DI-HONG;HOU CHUAN-PING;LU JHI-CHERNG |
分类号 |
H01L21/00;H01L21/20;H01L21/762;H01L21/84;H01L27/01;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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