发明名称 |
Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors |
摘要 |
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.
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申请公布号 |
US2005148114(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040751439 |
申请日期 |
2004.01.06 |
申请人 |
RHODES HOWARD E. |
发明人 |
RHODES HOWARD E. |
分类号 |
H01L21/44;H01L27/146;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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