发明名称 Reflection or transmission photomask for projection onto semiconductor substrate, e.g. wafer, in integrated circuit production, has substrate with opaque or semitransparent layer(s) covered by passivating layer with unpolar surface
摘要 <p>Photomask (1), for projecting a pattern on the mask onto a semiconductor substrate, comprises a substrate (3), first opaque or semitransparent layer(s) (5, 6), in which the pattern is formed as numerous openings (9), and a passivating layer with an unpolar surface on the first layer. An independent claim is also included for production of the mask.</p>
申请公布号 DE10356035(A1) 申请公布日期 2005.07.07
申请号 DE2003156035 申请日期 2003.12.01
申请人 INFINEON TECHNOLOGIES AG 发明人 VAAS, KNUT;MAEGE, IRIS;HIEN, STEFAN
分类号 G03F1/24;G03F1/48;H01L21/312;(IPC1-7):G03F1/14 主分类号 G03F1/24
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