发明名称 |
Reflection or transmission photomask for projection onto semiconductor substrate, e.g. wafer, in integrated circuit production, has substrate with opaque or semitransparent layer(s) covered by passivating layer with unpolar surface |
摘要 |
<p>Photomask (1), for projecting a pattern on the mask onto a semiconductor substrate, comprises a substrate (3), first opaque or semitransparent layer(s) (5, 6), in which the pattern is formed as numerous openings (9), and a passivating layer with an unpolar surface on the first layer. An independent claim is also included for production of the mask.</p> |
申请公布号 |
DE10356035(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
DE2003156035 |
申请日期 |
2003.12.01 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
VAAS, KNUT;MAEGE, IRIS;HIEN, STEFAN |
分类号 |
G03F1/24;G03F1/48;H01L21/312;(IPC1-7):G03F1/14 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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