| 摘要 |
<P>PROBLEM TO BE SOLVED: To resolve such a problem that it is difficult to raise a light extraction efficiency of a light emitting diode. <P>SOLUTION: The light emitting diode comprises a p-type nitride semiconductor layer (3), an active layer (4), an n-type nitride semiconductor layer (5) and a current diffusion layer (6) which are arranged on a silicon support substrate (1) through a buffer layer (2). The current diffusion layer (6) consists of multiple laminations of first and second layers (9), (10) including a heterojunction for obtaining a two dimensional electron gas effect. Since a resistance in a transverse direction of the current diffusion layer (6) having the two dimensional electron gas effect is small, there occurs current broadening, and consequently the light extraction efficiency improves. The current diffusion layer (6) also functions as a region where an ohmic contact is carried out with respect to a primary electrode (7). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
